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shekarriz Fomani M, Niaraki Asli R. Design of a Fully Hardened Latch Against SEDU with Input Transient Fault Filtering Capability Using an Enhanced C-Element. Journal of Iranian Association of Electrical and Electronics Engineers 2025; 22 (4) :131-138
URL: http://jiaeee.com/article-1-1698-en.html
University of Guilan
Abstract:   (6 Views)
As transistor dimensions, supply voltage levels, and node capacitances continue to scale down in modern nanoscale technologies, digital circuits become increasingly susceptible to soft errors, including input transient faults, single-node single-event upsets, and single-node double-event upsets. Therefore, designing robust latches is essential to maintain reliability and ensure stable circuit operation. In this work, a fully hardened latch immune to single-event double-node upsets and capable of filtering input transient faults is proposed, in which an enhanced C-element is employed as the primary mechanism for preventing fault propagation. Simulations performed using Gate-All-Around (GAA) technology indicate that, compared to competing designs, the proposed latch reduces power consumption by 34.77% to 73.80%, decreases propagation delay by 1.84% to 23.38%, and improves the power–delay product by 8.87% to 71.24%. Moreover, the proposed latch effectively filters input transient faults with pulse widths up to 7.9 ps. In addition, Monte Carlo analysis demonstrates that the proposed design exhibits significant robustness against process variations and environmental fluctuations.

 
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Type of Article: Research | Subject: Electronic
Received: 2024/02/21 | Accepted: 2025/12/19 | Published: 2026/02/6

References
1. [1] Sh. Taghipour and R. Niaraki Asli, "Impact of Negative Bias Temperature Instability on Gate All-Around Flip-Flops", Proc. Int. Conf. on Journal of Electronic Testing, pp. 100-105,2019. [DOI:10.1007/s10836-019-05774-3]
2. [2] M. Singh Narula and A. Pandy, "A Comprehensive Review on FinFET, Gate All Around, Tunnel FET : Concept, Performance and Challenges", 8th International Conference on Signal Processing and Communication (ICSC),2022. [DOI:10.1109/ICSC56524.2022.10009504]
3. [3] IEEE INTERNATIONAL ROADMAP FOR DEVICES AND SYSTEMS IEEE,International Roadmap for Devices and Systems - IEEE IRDS™,2022.
4. [4] Binaei R, Gholami M. Introducing New Structures for D-Type Latch and Flip-Flop in Quantum-Dot Cellular Automata Technology and its Use in Phase-Frequency Detector, Frequency Divider and Counter Circuits. Journal of Iranian Association of Electrical and Electronics Engineers 2021; 18 (1) :71-80
5. [5] Gholami M, Rahimpour H. New JK-Latch and Flip-Flop in Quantum-Dot Cellular Automata Technology with Minimal Area. Journal of Iranian Association of Electrical and Electronics Engineers 2025; 22 (2) :183-187 [DOI:10.61882/jiaeee.22.2.183]
6. [6] A. Yan, K. Qian, T. Song, Z. Huang, T. Ni, Y. Chen and X. Wen, "A double-node-upset completely tolerant CMOS latch design with extremely low cost for high-performance applications", INTEGRATION, the VLSI journal Elsevier,2022. [DOI:10.1016/j.vlsi.2022.04.008]
7. [7] Xu, H.; Liu, X.; Yu, G.; Liang, H.; Huang, Z. "LIHL: Design of a Novel Loop Interlocked Hardened Latch. Electronics", 2021. [DOI:10.3390/electronics10172090]
8. [8] S.N.Mozaffari and A.Afzali-Kusha, "Statistical Model for Subthreshold Current Considering Process Variations", IEEE Asia Smposium on Quality Electronic Design,2010. [DOI:10.1109/ASQED.2010.5548311]
9. [9] F.M.Sajjade, N.K.Goyal, B. K. S. V. L. Varaprasad and R.Moogina, "Radiation Hardened by Design Latches-A Review and SEU Fault Simulations", Microelectronics Reliability, 83: 127-135,2018. [DOI:10.1016/j.microrel.2018.02.017]
10. [10] Omana, Martin, Daniele Rossi, TusharaSandeep Edara, and Cecilia Metra. "Impact of aging phenomena on latches' robustness", IEEE Transactions on Nanotechnology 15, no. 2 (2016). [DOI:10.1109/TNANO.2015.2494612]
11. [11] H. Nan and K. Choi, "High Performance, Low Cost, and Robust Soft Error Tolerant Latch Designs for Nanoscale CMOS Technology", IEEE Transactions on Circuits and Systems-I: REGULAR PAPERS,2012. [DOI:10.1109/TCSI.2011.2177135]
12. [12] R. Rajaei, M. Tabandeh and M. Fazeli, "Single Event Multiple Upset (SEMU) Tolerant Latch Designs in Presence of Process and Temperature Variations", Journal of Circuits, Systems, and Computers, Vol. 24, No. 1,2015. [DOI:10.1142/S0218126615500073]
13. [13] S. Kumar and S. Kumaravel, "Design and Analysis of SEU Hardened Latch for Low Power and High Speed Applications", Journal of Low Power Electronics and Applications,2019. [DOI:10.3390/jlpea9030021]
14. [14] A. Yan, H. Liang, Z. Huang and C. Jiang, "High-performance, low-cost, and highly reliable radiation hardened latch design", Electronics Letters,2016. [DOI:10.1049/el.2015.3020]
15. [15] A. Yana, Z. Huangb, X. Fangc, Y. Ouyangc and H. Deng, "Single event double-upset fully immune and transient pulse filterable latch design for nanoscale CMOS", Microelectronics Journal,2017. [DOI:10.1016/j.mejo.2017.01.001]
16. [16] A.Yan, Y. Chen, Z. Xu, Z. Chen, J. Cui, Z. Huang, P. Girard, X. Wen, "Design of Double-Upset Recoverable and TransientPulse Filterable Latches for Low Power and LowOrbit Aerospace Applications", IEEE Transactions on Aerospace and Electronic Systems,2016.
17. [17] A. Yan, Z. Fan, L. Ding, J. Cui, Z. Huang, Q. Wang, H. Zheng, P. Girard, X. Wen, "Cost-Effective and Highly Reliable Circuit-Components Design for Safety-Critical Applications", IEEE Transactions on Aerospace and Electronic Systems,2022. [DOI:10.1109/TAES.2021.3103586]
18. [18] S. Wang, L. Wang, M. Guo, Y. Li, B. Li, "A Novel DNU Self-Recoverable and SET Pulse Filterable Latch Design for Aerospace Applications", Electronics12051193, 2023. [DOI:10.3390/electronics12051193]
19. [19] S. JaeYoung, Ch. WooYoung, P. JuHee, L. JongDuk, P. Byung-Gook, "Design Optimization of Gate-All-Around (GAA) MOSFETs", IEEE Transactions on Nanotechnology, Vol. 5, No. 3, pp. 186-191,2006. [DOI:10.1109/TNANO.2006.869952]
20. [20] D. Mohan-V, L. Chng-Hsun, A. Niknejad, H. Chenming, "BSIM-CMG: A compact model for multi-gate transistors, in: J.P. Colinge, chap.3 of FinFETs and Other Multi-Gate Transistors", Springer, New York, NY, USA, pp. 113-151,2008.
21. [21] Z. Huang1, H. Wang, D. Ma, H. Liang, Y. Ouyang, A. Yan, "Low Overhead and High Stability Radiation‑Hardened Latch for Double/Triple Node Upsets", Journal of Electronic Testing, 39:289-301, 2023. [DOI:10.1007/s10836-023-06064-9]
22. [22] S.S. Hatefinasab, A. Ohata, A. Salina, E. Castillo AND N. Rodriguez, "Highly Reliable Quadruple-Node Upset-Tolerant D-Latch", Digital Object Identifier 10.1109/ACCESS,2022. [DOI:10.1109/ACCESS.2022.3160448]
23. [23] H. XU, C. SUN,L.ZHOU, H. LIANG, Z. HUANG, "Design of a Highly Robust Triple-Node-Upset Self-Recoverable Latch", IEEE Access, Vol. 9,2021. [DOI:10.1109/ACCESS.2021.3104335]

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