Volume 11, Issue 2 (10-2014)
Journal of Iranian Association of Electrical and Electronics Engineers 2014, 11(2): 9-16 |
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Zahiri Z, Hosseini S E, Kabirian Dehkordi B. Introduce of Bipolar junction transistor based on concept of surface inversion. Journal of Iranian Association of Electrical and Electronics Engineers 2014; 11 (2) :9-16
URL: http://jiaeee.com/article-1-133-en.html
URL: http://jiaeee.com/article-1-133-en.html
Abstract: (4086 Views)
In this paper, we report a new structure for bipolar junction transistors based on concept of surface inversion. This structure is made up of only one PN junction and a metal with appropriate work function connected to the p region which results in an inversion of electrons in the semiconductor near the metal-semiconductor interface, this inversion layer plays the role of emitter n+ region. Simulations show that the proposed transistor has a very high current gain and cutoff frequency.
Type of Article: Research |
Subject:
Electronic
Received: 2017/02/6 | Accepted: 2017/02/6 | Published: 2017/02/6
Received: 2017/02/6 | Accepted: 2017/02/6 | Published: 2017/02/6
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