Volume 21, Issue 3 (JIAEEE Vol.21 No.3 2024)
Journal of Iranian Association of Electrical and Electronics Engineers 2024, 21(3): 103-113 |
Back to browse issues page
Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:
Aliparast P, Zabihi B, Nasirzadeh N. Design of Class F High-Frequency Power Amplifier Based on MMIC for 2.5GHz with GaN150nm Technology. Journal of Iranian Association of Electrical and Electronics Engineers 2024; 21 (3) :103-113
URL: http://jiaeee.com/article-1-1296-en.html
URL: http://jiaeee.com/article-1-1296-en.html
Astronautics Research Institute, Tehran
Abstract: (1459 Views)
In this article, high frequency power amplifier is designed based on monolithic microwave integrated circuit (MMIC) technology. For this design the process of GaN transistors with high electron mobility has been used and its length gate technology is 150nm central frequency of the amplifier is 2.5GHz. the maximum gain of the amplifier is approximately equal to 13.97dB and is designed in one stage. At this frequency, the maximum output power of the amplifier is about 36.4 dBm in 30dBm input. In the maximum output power, PAE is about 3.2%. the maximum value of PAE is about 41.9% in the input power 25dBm in which the output is equal to 35.62 dBm. The final area of the circuit for embedding on the chip is 30.31mm by 18.2mm.the maximum values of AM/pM and AM/AM are 2.61deg/db and 1.31dB/dB respectively. For the 3-rd intermodulation distortion (IMD3) is about -16.5 dBc at the center of frequency
Keywords: High frequency power amplifier, monolithic microwave integrated circuit, power gain, GaN, P1dB, Gallium nitride, IMD3
Type of Article: Research |
Subject:
Electronic
Received: 2021/04/10 | Accepted: 2023/12/14 | Published: 2024/11/2
Received: 2021/04/10 | Accepted: 2023/12/14 | Published: 2024/11/2
References
1. [1] Danish Kalim, Adel Fatemi and Renato Negra., Dual-band 1.7 GHz / 2.5 GHz class-E power amplifier in 130 nm CMOS technology, 10th IEEE International NEWCAS Conference, DOI: 10.1109/NEWCAS.2012.6329059 [DOI:10.1109/NEWCAS.2012.6329059]
2. [2] Meng-Ping Chen; Chun-Hsing Shih; Wei Chang; Chenhsin Lien.,A 2.5GHz CMOS Power Amplifier for WiMAX Application., The 2010 International Conference on Green Circuits and Systems., DOI: 10.1109/ICGCS.2010.5542974 [DOI:10.1109/ICGCS.2010.5542974] []
3. [3] Nathalie Deltimple; Marcos L. Carneiro; Eric Kerhervé; Paulo H. P. Carvalho; Didier Belot., Integrated Doherty RF CMOS Power Amplifier design for average efficiency enhancement., 2015 IEEE International Wireless Symposium (IWS 2015)., DOI: 10.1109/IEEE-IWS.2015.7164638 [DOI:10.1109/IEEE-IWS.2015.7164638]
4. [4] Ashish Jindal; Umakant Goyal; Karun Rawat; Ananjan Basu; Meena Mishra; S.K. Koul., 1.5-2.5 GHz Measurement Based Power Amplifier Using SSPL GaN HEMT Device., 2019 IEEE MTT-S International Microwave and RF Conference (IMARC)., DOI: 10.1109/IMaRC45935.2019.9118682 [DOI:10.1109/IMaRC45935.2019.9118682]
5. [5] D. Kang, J. Choi, D. Kim, D. Yu, K. Min and B. Kim, "30.3% PAE HBT Doherty power amplifier for 2.5∼2.7 GHz mobile WiMAX", 2010 IEEE MTT-S International Microwave Symposium, 2010, pp. 796-799, doi: 10.1109/MWSYM.2010.5517709. [DOI:10.1109/MWSYM.2010.5517709] [PMID] []
6. [6] Paolo Colantonio, Franco Giannini, and Ernesto Limiti., High Efficiency RF and Microwave Solid state power amplifier., 2009 John Wiley & Sons Ltd [DOI:10.1002/9780470746547] []
7. [7] Razavi, Behzad" RF microelectronics" 2nd-ed, Prentice Hall, ISBN: 978-013-713473-1, 2011.
8. [8] Young Yun Woo, Youngoo Yang and Bumman Kim, "Analysis and experiments for high-efficiency class-F and inverse class-F power amplifiers," in IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 5, pp. 1969-1974, May 2006, doi: 10.1109/TMTT.2006.872805. [DOI:10.1109/TMTT.2006.872805]
9. [9] Aliparast, peiman, sevda Aliparast design of soild state high power amplifier for leo satellite communication system", In sustainable Aviation, pp.95-103. Spring, charm,2016. [DOI:10.1007/978-3-319-34181-1_9]
10. [10] Hengjin Li, Dalong Zhu and Dexi Liu, "Simulation and design of Ku band power amplifier based on GaN HEMT", 2014 IEEE International Conference on Communiction Problem-solving, 2014, pp. 202-204, doi: 10.1109/ICCPS.2014.7062253. [DOI:10.1109/ICCPS.2014.7062253]
11. [11] O. Jardel et al., "A 30W, 46% PAE S-band GaN HEMT MMIC power amplifier for Radar applications", 2012 7th European Microwave Integrated Circuit Conference, 2012, pp. 639-642. [DOI:10.23919/EuMC.2012.6459166]
12. [12] N. Deltimple, M. L. Carneiro, E. Kerhervé, P. H. P. Carvalho and D. Belot, "Integrated Doherty RF CMOS Power Amplifier design for average efficiency enhancement", 2015 IEEE International Wireless Symposium (IWS 2015), 2015, pp. 1-4, doi: 10.1109/IEEE-IWS.2015.7164638. [DOI:10.1109/IEEE-IWS.2015.7164638]
13. [13] D. Barataud et al., "Measurement and control of current/voltage waveforms of microwave transistors using a harmonic load-pull system for the optimum design of high efficiency power amplifiers", in IEEE Transactions on Instrumentation and Measurement, vol. 48, no. 4, pp. 835-842, Aug. 1999, doi: 10.1109/19.779185. [DOI:10.1109/19.779185]
14. [14] Mihai Albulet "RF Power Amplifiers" NOBLE, ISBN: 1-884932-12-6, 2001. [DOI:10.1049/SBEW030E]
15. [15] Gonzalez, Gullermo. "Microwave Transistor Amplifiers Analysis and Design", 2nded, Prentice Hall, ISBN: 0-13-254335-4, 1996.
16. [16] R. Raja, R. Theegala, & B. Venkataramani, "A class-E power amplifier with high efficiency and high power-gain for wireless sensor network. Microsyst Technol 23, 4179-4193 (2017)", doi10.1007/s00542-016-3022-0 [DOI:10.1007/s00542-016-3022-0]
17. [17] N. Khalid, T. Abbas and M. Bin Ihsan, "Power amplifier design using GaN HEMT in class-AB mode for LTE communication band", 2015 International Wireless Communications and Mobile Computing Conference (IWCMC), 2015, pp. 685-689, doi: 10.1109/IWCMC.2015.7289166. [DOI:10.1109/IWCMC.2015.7289166] [PMID]
18. [18] S. Bensmida, O. Hammi and F. M. Ghannouchi, "High efficiency digitally linearized GaN based power amplifier for 3G applications", 2008 IEEE Radio and Wireless Symposium, 2008, pp. 419-422, doi: 10.1109/RWS.2008.4463518. [DOI:10.1109/RWS.2008.4463518]
19. [19] B. M. Hamouda, B. M. Abdelrahman and H. N. Ahmed, "A 3.5-GHz, Highly-Efficient Power Amplifier for Wireless Communication Applications", 2020 12th International Conference on Electrical Engineering (ICEENG), 2020, pp. 331-334, doi: 10.1109/ICEENG45378.2020.9171720. [DOI:10.1109/ICEENG45378.2020.9171720]
20. [20] علیپرست، پیمان. و فرهادی، احد. "طراحی یک تقویت کننده توان فرکانس رادیویی یکپارچه باند X مبتنی بر فناوری ALGaN/GaN HEMT"، نشریه انجمن مهندسی برق و الکترونیک ایران، سال شانزدهم، شماره دوم، تابستان 1398.
21. [21] موذن، حمیدرضا. کریمزاده بائی، رقیه. و احمدی، امیرحسین. "طراحی و ساخت تقویت کننده توان 8 وات با بهره و بازدهی بالا در باند X با استفاده از ترانزیستورهای GaN-HEMT به صورت Die برای کاربرد در ارتباطات ماهوارهای"، نشریه انجمن مهندسی برق و الکترونیک ایران، سال نوزدهم، شماره سوم، پاییز 1401.
Send email to the article author
| Rights and permissions | |
 |
This Journal is an open access Journal Licensed under the Creative Commons Attribution-NonCommercial 4.0 International License. (CC BY NC 4.0) |
