JIAEEE Vol.17 No.4                   Back to the articles list | Back to browse issues page

XML Persian Abstract Print

Abstract:   (204 Views)
The high-energy UV ray radiation on PIN Silicon photodiodes reduces the optimal parameters of these photodiodes. In this paper, by representing a model, we compare the effect of UV dose on the bright current in these two types of photodiodes and confirm the analytic relationships in order to simulate a model with the help of the Silvaco- Atlas software. In this model, Silicon photodiodes and Gallium Arsenide were investigated under the influence of 300nm UV source radiation in several reverse bias, and we arrived at a logical connection between the analytical and simulation results, and finally, in order to compare these two types of photodiodes, we have shown that the current of darkness in the photodiode has increased significantly with UV dose radiation. Also, the bright current in the Gallium Arsenide photodiodes is not much more than its Silicon model. This phenomenon indicates a higher sensitivity to Gallium Arsenide photodiodes.
Type of Article: Review | Subject: Electronic
Received: 2017/08/13 | Accepted: 2019/11/16

Add your comments about this article : Your username or Email:

Send email to the article author

© 2020 All Rights Reserved | Journal of Iranian Association of Electrical and Electronics Engineers

Designed & Developed by : Yektaweb