Volume 18, Issue 4 (JIAEEE Vol.18 No.4 2021)                   Journal of Iranian Association of Electrical and Electronics Engineers 2021, 18(4): 71-77 | Back to browse issues page

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Bashiri N, Hosseini R. Design and Analysis of a Multi Material Double Gate Junctionless Tunnel Field Effect Transistor. Journal of Iranian Association of Electrical and Electronics Engineers 2021; 18 (4) :71-77
URL: http://jiaeee.com/article-1-711-en.html
Design and Analysis of a Multi Material Double Gate Junctionless Tunnel Field Effect Transistor
Negar Bashiri , Reza Hosseini *
Department of Electrical Engineering, Khoy Branch, Islamic Azad University, Khoy
Abstract:   (1761 Views)
In this paper, a double gate junctionless tunnel field effect transistor (JLTFET) with multi material gate (MMG) structure is presented, and the performance of the transistor has been investigated based on the energy band diagram. All simulations have been carried out using the two dimensional Silvaco Atlas simulator. The effect of the conduction band minima on the abruptness of transition between the ON and OFF states has been hown. Selection of the appropriate value of the gate work function of the proposed structure can give low OFF current, low subthreshold swing, high ON current and improved ION/IOFF. Also, in this paper, the electrical characteristics of MM DG Tunnel FET have been compared with single and dual material gates structures. The proposed structure presented low threshold voltage, high ON current and high ION/IOFF in comparison with the other structures. Finally, high transconductance and high cut-off frequency were observed in multi material double gate device in comparison to other structures.

 
Keywords: Junctionless tunnel field effect transistor (JLTFET), Band to band tunneling (BTBT), Workfunction, Multi material gate (MMG), OFF current, ON current
Full-Text [PDF 614 kb]   (1202 Downloads)    
Type of Article: Research | Subject: Electronic
Received: 2018/10/29 | Accepted: 2019/05/13 | Published: 2021/10/14
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