Volume 15, Issue 2 (JIAEEE Vol.15 No.2 2018)                   Journal of Iranian Association of Electrical and Electronics Engineers 2018, 15(2): 1-7 | Back to browse issues page

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bajelan F, yazdanpanah A, faez R, darvish G. Investigation Performance of p-type Junctionless Field Effect Transistors with InGaP, InP and Si Channel Materials. Journal of Iranian Association of Electrical and Electronics Engineers. 2018; 15 (2) :1-7
URL: http://jiaeee.com/article-1-638-en.html
PhD Student, Islamic Azad University, Science and Research Branch, Tehran
Abstract:   (877 Views)
In this paper, using non-equilibrium Green's function method, the performance of junctionless transistors that are with Si, InP, and InGaP channels material are investigated.The shape of transistor’s gate is chosen as gate all around (GAA). Parameters such as DIBL, subthreshold slope (SS), OFF-state current, ON-state current and ON/OFF current ratio in these devices are investigated. The main problem of the junctionless transistors is the OFF-state current and the subthreshold slope. By choosing materials with a large bandgap and a high density of valence state, it is possible to reduce the OFF-state current without noticeable reducing of the ON-state current. Therefore, device with InGaP channel material has better characteristics in terms of OFF-state and the SS. The values of DIBL, SS, OFF-state current, ON-state current and ON/OFF current ratio in gate length 10 nm are 14 mV / V, 61.1 mV/ dec, 2.26×10-15A, 5.94×10-6A, and 2.62×109.
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Type of Article: Research | Subject: Electronic
Received: 2018/08/2 | Accepted: 2018/08/2 | Published: 2018/08/2

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