دوره 14، شماره 4 - ( مجله مهندسی برق و الکترونیک ایران - جلد ۱4 شماره ۴ 1396 )                   جلد 14 شماره 4 صفحات 1-13 | برگشت به فهرست نسخه ها

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Khavari A F, Mafinezhad K, Maymandi Nejad M. A Broadband Low Power CMOS LNA for 3.1–10.6 GHz UWB Receivers. Journal of Iranian Association of Electrical and Electronics Engineers. 2018; 14 (4) :1-13
URL: http://jiaeee.com/article-1-456-fa.html
Khavari Amir Farzad، Mafinezhad Khalil، Maymandi Nejad Mohammad. A Broadband Low Power CMOS LNA for 3.1–10.6 GHz UWB Receivers. مجله مهندسی برق و الکترونیک ایران. 1396; 14 (4) :1-13

URL: http://jiaeee.com/article-1-456-fa.html


Ph.D. Candidate Ph.D. Candidate, Department of Electrical Engineering, Faculty of Engineering, Ferdowsi University, Mashhad, Iran
چکیده:   (1051 مشاهده)
A new approach for designing an ultra wideband (UWB) CMOS low noise amplifier (LNA) is presented. The aim of this design is to achieve a low noise figure, reasonable power gain and low power consumption in 3.1-10.6 GHz. Also, the figure of merit (FOM) is significantly improved at 180nm technology compared to the other state-of-the-art designs. Improved π-network and T-network are used to obtain a high and smooth power gain for the whole frequency band. Impedance matching and noise matching are designed with double feedback and only one inductor that are used at the input of the LNA. Post layout simulation is done for design validation. In this design post layout simulations show the low noise figure of 3.85±0.25 dB, reasonable power gain (18.08dB) and input return loss less than -9.1dB in full band of UWB. The power consumption of the circuit is only 11.3mW from 1.8V voltage supply. The LNA has the group delay about 111±43ps. An input third-order intermodulation point (IIP3) of -9.2 dBm is achieved at 4 GHz. The layout area is 1.056 × 0.658 mm2.
واژه‌های کلیدی: Ultra wideband، UWB، Low Noise Amplifier، LNA، CMOS.
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نوع مقاله: پژوهشي | موضوع مقاله: الکترونیک
دریافت: ۱۳۹۶/۹/۷ | پذیرش: ۱۳۹۶/۹/۷ | انتشار: ۱۳۹۶/۹/۷

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