English title

In this paper a compact current-voltage model for MOSFET-like Carbon Nanotube Field Effect Transistors (MOSFET-like CNFET) is presented. To model these devices the one-dimensional drain/source current equation obtained from Landauer approach must be solved self-consistently with the equation relates the Fermi surface and carrier concentration. Also, numerically solve of the integral over density of states and Fermi function is necessary. This calculation is a little complex. In this paper, by studying the behavior of this integral in all regions and employing its functionality to Fermi surface we show that it can be approximated with a quadratic equation. This approximation results in a compact current-voltage model in both sub-threshold and above-threshold which shows good agreement comparing with numerical one.