English title

In this paper, analytical models for NBTI induced degradation in a P-channel triple gate MOSFET and HCI induced degradation in an N-channel bulk FinFET are presented, through solving the Reaction-Diffusion equations multi-dimensionally considering geometry dependence of this framework of equations. The new models are compared to measurement data and gives excellent results. The results interpret accurately the geometry dependence of the time exponent of NBTI and HCI degradations in these device structures. In addition, the floating-body effect on NBTI phenomenon in an undoped double-gate (DG) MOSFETs is modeled and investigated by solving the one-dimensional (1-D) Poisson's equation considering NBTI effect, in inversion region for different stress voltages and different device body thicknesses. The accuracy of the model is verified by the finite difference method (FDM). These results show that in FB devices, accumulation of NBTI generated electrons in the device body brings about reduction of the body potential and the oxide field. Therefore the interface trap generation rate in FB devices decreases which leads to smaller amount of interface traps and degradation in these devices compared to BT devices.