Showing 3 results for Sepehri
M. Sepehrinia, M. Pooyan,
Volume 12, Issue 2 (10-2015)
Abstract
Atrial Fibrillation is a supra ventricular tachyarrhythmia, which is characterized by the deterioration of atrial mechanical function and aberrant. It has become a social and economic problem because a large percentage of the world population suffering from this disease. The early diagnosis of this fatal cardiac Arrhythmia can be prevented and managed it. In this study, we used non-invasive methods based on nonlinear analysis of ECG signal, to identify individuals prone to Atrial Fibrillation. This study consists of three steps, the first step is preprocessing of ECG signals collected from the Physionet to removed 50 Hz and Artifacts noises, then the HRV signal is extracted from them. Secondly, extract nonlinear parameters from HRV signal, including the Poincare Plot Deviations, Correlation Dimension, Lyapunov Exponent, Approximate Entropy and Sample Entropy, and the five characteristics of Recurrence Plot Quantitative Analysis. Third we use a Support Vector Machine classifier for the classification healthy people and those at risk for Atrial Fibrillation Attack. Final results show that Support Vector Machine classifier is able to differentiate healthy from patient population with 93% accuracy, when HRV signal analysis 5 minutes before the onset of Atrial Fibrillation episodes.
Zahra Sepehri, Dr. Arash Daghighi,
Volume 16, Issue 2 (JIAEEE Vol.16 No.2 2019)
Abstract
In this paper, for the first time, an analytical equation for threshold voltage computations in silicon-on-diamond MOSFET with an additional insulation layer is presented; In this structure, the first insulating layer is diamond which covered the silicon substrate and second insulating layer is SiO2 which is on the diamond and it is limited to the source and drain on both sides. Analytical solution was used to determine the threshold voltage by computations of capacitors in buried insulators. Simulation and Analytical results of threshold voltage in silicon-on-diamond and silicon-on-insulator with the same dimensions and channel length were compared. Theeffect of device parameters like gate oxide thickness, silicon body thickness, length and thickness of oxide on threshold voltage of the silicon-on-diamond MOSFET were investigated and the analytical results were compared against device simulation findings.
Majid Heidarzadeh, Dr. Arash Daghighi, Zahra Sepehri,
Volume 21, Issue 1 (JIAEEE Vol.21 No.1 2024)
Abstract
In this paper, for the first time, the distributed potentials in the front and back gate of Ultra-Thin-Body (UTB) Double-Insulating (DI) Silicon-on-Diamond (SOD) MOSFET are computed. The back gate and front gate threshold voltages of the device are computed. Using parabolic potential distribution in the body of the device, the poison’s equation is solved. Promising results are obtained for front and back gate threshold voltages comparing with the 22nm UTB DI SOD and the device simulation results. The gate insulator thickness, the silicon film thickness, the insulator 1 and 2 thicknesses are varied and the front and back gate threshold voltages are computed while comparing the device simulation results. Lower than 20 mV estimation of the threshold voltages using the analytical computations, dictates promising results incorporating the device capacitive model. The Analytical findings are encouraging for threshold voltage estimation of UTB DI SOD MOSFETs.
