JIAEEE Vol.17 No.4                   Back to the articles list | Back to browse issues page

XML Persian Abstract Print


saveh islamic azad university
Abstract:   (192 Views)
The electrical properties and rectification behavior of the graphene self-switching diodes by side gates doping with nitrogen and boron atoms were investigated using density functional tight-binding method. The devices gates doping changes the electrical conductivity of the side gates and the semiconductor channel nanoribbons. As a result, the threshold voltage value under the forward bias is significantly reduced, so that in the boron and nitrogen doped 565 structures, this voltage is close to zero. Also, relative to the undoped structure, the electric current under the forward and reverse biases of the doped devices are increased and decreased, respectively. Among all the structures, the boron atoms doped 565 structure has the highest rectification ratio of 558.58 and also, the maximum current under the forward bias is related to this structure with the value of 8.56 μA.
 
     
Type of Article: Research | Subject: Electronic
Received: 2018/10/1 | Accepted: 2019/10/15

Add your comments about this article : Your username or Email:
CAPTCHA

Send email to the article author


© 2020 All Rights Reserved | Journal of Iranian Association of Electrical and Electronics Engineers

Designed & Developed by : Yektaweb