Volume 14, Issue 4 (JIAEEE Vol.14 No.4 2018)                   Journal of Iranian Association of Electrical and Electronics Engineers 2018, 14(4): 1-13 | Back to browse issues page

XML Persian Abstract Print

Abstract:   (1921 Views)
A new approach for designing an ultra wideband (UWB) CMOS low noise amplifier (LNA) is presented. The aim of this design is to achieve a low noise figure, reasonable power gain and low power consumption in 3.1-10.6 GHz. Also, the figure of merit (FOM) is significantly improved at 180nm technology compared to the other state-of-the-art designs. Improved π-network and T-network are used to obtain a high and smooth power gain for the whole frequency band. Impedance matching and noise matching are designed with double feedback and only one inductor that are used at the input of the LNA. Post layout simulation is done for design validation. In this design post layout simulations show the low noise figure of 3.85±0.25 dB, reasonable power gain (18.08dB) and input return loss less than -9.1dB in full band of UWB. The power consumption of the circuit is only 11.3mW from 1.8V voltage supply. The LNA has the group delay about 111±43ps. An input third-order intermodulation point (IIP3) of -9.2 dBm is achieved at 4 GHz. The layout area is 1.056 × 0.658 mm2.
Full-Text [PDF 459 kb]   (1088 Downloads)    
Type of Article: Research | Subject: Electronic
Received: 2017/11/28 | Accepted: 2017/11/28 | Published: 2017/11/28