Volume 15, Issue 2 (JIAEEE Vol.15 No.2 2018)                   Journal of Iranian Association of Electrical and Electronics Engineers 2018, 15(2): 17-23 | Back to browse issues page

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hejazifar M J, sedigh ziabari S A. Investigation of Effect of Channel Impurity Haloand its Concentration Slope in the Linear Halo Lightly Doped Drain and Source CNTFET . Journal of Iranian Association of Electrical and Electronics Engineers. 2018; 15 (2) :17-23
URL: http://jiaeee.com/article-1-640-en.html
Instructor, Islamic Azad University of Talesh, Talesh, Iran
Abstract:   (537 Views)
In this work, a lightly doped drain and source CNTFET with a linear channel impurity halo is proposed and the effect of linear halo slope variation on ON current, ON–OFF current ratio, leakage current, power–delay product (PDP) and cutoff frequency has been investigated. Proposed linear halo lightly doped drain and source CNTFETs has been simulated using non equilibrium Green’s function (NEGF) method. We find that the linear halo in source side of the intrinsic channel improves the ON–OFF current ratio for . The ON current and power–delay product (PDP) are increased by reducing the slope of the linear halo region. Also, by decreasing the concentration of lightly doped drain and source regions,we observe a decrease in the PDP and its dependence on the halo concentration slope. By calculating the cutoff frequency of linear halo lightly doped drain and source CNTFET shown that creating a linear halo region increases the cutoff frequency. Furthermore, the cutoff frequency is improved by reducing the slope of linear halo region.
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Type of Article: Research | Subject: Electronic
Received: 2018/08/4 | Accepted: 2018/08/4 | Published: 2018/08/4

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