Volume 19, Issue 3 (JIAEEE Vol.19 No.3 2022)                   Journal of Iranian Association of Electrical and Electronics Engineers 2022, 19(3): 83-92 | Back to browse issues page

XML Persian Abstract Print

Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:
Moazzen H, Karimzadeh Baee R, Ahmadi A. Design and Fabrication of a High-Efficiency and High-Gain X-Band Power Amplifier Using GaN-HEMT Die Transistors for Satellite Communications. Journal of Iranian Association of Electrical and Electronics Engineers 2022; 19 (3) :83-92
URL: http://jiaeee.com/article-1-1363-en.html
Design and Fabrication of a High-Efficiency and High-Gain X-Band Power Amplifier Using GaN-HEMT Die Transistors for Satellite Communications
Hamidreza Moazzen , Roghieh Karimzadeh Baee * , Amirhossin Ahmadi
Faculty of Communications Technology, Iran Telecommunication Research Center
Abstract:   (1099 Views)
In this paper, the design and fabrication of a hybrid microwave integrated circuit (HMIC) power amplifier (PA) with more than 8 Watts of output power and 50 dB of large signal gain in the frequency range of 10.95-11.20 GHz for satellite communications is presented. In order to have a high-efficiency PA, the last two stages of the PA are custom designed and fabricated using GaN transistors as separate modules. To evaluate the repeatability of the designed PA, 16 samples of the custom-designed PA are fabricated and measured. All of the measured PAs provided 8 Watts of output power with more than 55% of power added efficiency (PAE). To have a gain of more than 50 dB, commercial integrated circuits (ICs) are used as gain stages. Finally, the performance of the fabricated PA is evaluated using a 10 MSym/s QAM signal and 6 Watts of average output power with 33% of efficiency is achieved at 11 GHz.
Keywords: Power amplifier, Satellite communications, Power added efficiency, X-band
Full-Text [PDF 1881 kb]   (844 Downloads)    
Type of Article: Research | Subject: Communication
Received: 2021/08/12 | Accepted: 2021/12/16 | Published: 2022/09/2
Add your comments about this article : Your username or Email:
CAPTCHA
Send email to the article author

Rights and permissions
Creative Commons License This Journal is an open access Journal Licensed under the Creative Commons Attribution-NonCommercial 4.0 International License. (CC BY NC 4.0)

© 2024 CC BY-NC 4.0 | Journal of Iranian Association of Electrical and Electronics Engineers

Designed & Developed by : Yektaweb