Volume 18, Issue 4 (JIAEEE Vol.18 No.4 2021)
Journal of Iranian Association of Electrical and Electronics Engineers 2021, 18(4): 37-47 |
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Hassanzadeh A, Shirazi M. Design of a Low Voltage, Low Power Self-Biased OTA Using FinFET Transistors. Journal of Iranian Association of Electrical and Electronics Engineers 2021; 18 (4) :37-47
URL: http://jiaeee.com/article-1-843-en.html
URL: http://jiaeee.com/article-1-843-en.html
Shahid Beheshti University
Abstract: (1762 Views)
In this paper, a low voltage OTA has been designed and simulated using independent gate FinFET transistors for low power applications. Pseudo differential input stage and self-bias techniques have been used for rail-to-rail operation of the input stage of the amplifier. Furthermore, by using double gate FinFET instead of CMOS transistors, frequency response and power dissipation have been improved. For the independent gate FinFET, one gate has been used for biasing and the other has been used for input signal. DFC method has been used for frequency compensation employing small capacitor. 20nm PTM model has been used for amplifier simulations using HSPICE. Simulation results show that amplifier gain is 39.27dB with 45.05 degrees PM and unity gain frequency is 8.26 MHz with a 3pF loading capacitor. The total power dissipation is 37.75 µW, using 0.5V supply voltage and 0.267V output stage DC voltage.
Type of Article: Research |
Subject:
Electronic
Received: 2019/03/29 | Accepted: 2020/06/20 | Published: 2021/10/14
Received: 2019/03/29 | Accepted: 2020/06/20 | Published: 2021/10/14
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