Volume 19, Issue 2 (JIAEEE Vol.19 No.2 2022)
Journal of Iranian Association of Electrical and Electronics Engineers 2022, 19(2): 73-80 |
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Esmailpour Gildeh R, Yavari M H, Heydari M. Design and Analysis of Injection Locked Semiconductor Ring Laser. Journal of Iranian Association of Electrical and Electronics Engineers 2022; 19 (2) :73-80
URL: http://jiaeee.com/article-1-1205-en.html
URL: http://jiaeee.com/article-1-1205-en.html
Faculty of Engineering, Shahed University
Abstract: (1552 Views)
In this paper, based on the rate equations model for injection locked semiconductor ring laser, new equations are developed for modelling the detuning frequency and direct modulation response of the slave laser as well as the amplitude and phase modulation response of the master laser. Results show that by increasing the injection power of the master laser, the dynamic characteristics of the slave laser are improved consequently, locking area range, relaxation oscillation frequency and slave laser direct modulation bandwidth as well as field amplitude and phase of the master laser are enhanced by comparing the result of different modulation schemes. It is observed that master phase modulation configuration provides the largest bandwidth while the output response is considered amplitude of the slave laser (80 times of the slave laser direct modulation frequency response).
Keywords: Injection Locking, detuning frequency, Master laser, slave laser, semiconductor ring laser, locking region
Type of Article: Research |
Subject:
Electronic
Received: 2020/10/18 | Accepted: 2021/05/20 | Published: 2022/06/24
Received: 2020/10/18 | Accepted: 2021/05/20 | Published: 2022/06/24
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