TY - JOUR JF - jiaeee JO - Journal of Iranian Association of Electrical and Electronics Engineers VL - 14 IS - 2 PY - 2017 Y1 - 2017/9/01 TI - Design and Modeling of Room-Temperature Analog-to-Digital Converters based on Nano-scale Semiconductor Quantum-dot Single Electron Transistors TT - طراحی و مدل سازی مبدل های آنالوگ به دیجیتال سازگار با دمای اتاق به کمک نانوترانزیستورهای تک الکترونی با جزیره کوانتوم نقطه ای نیمه هادی N2 - In this article, the design and modeling details of room-temperature analog-to-digital converter (ADC) based on silicon quantum-dot (QD) single-electron transistors (SETs) is presented. In contrast to the conventional metal quantum dots, the use of silicon QDs in the scales of few nano-meters enhances the device operation and makes stable the Coulomb blockade and Coulomb oscillation regimes at room temperature. Nano-scale silicon QD-based SETs are also compatible with CMOS fabrication steps and can be integrated along with CMOS circuits on a same substrate. The proposed ADC in this article benefits from stable Coulomb oscillations of silicon QD-based SETs at room temperature. A 3-bit 5-GS/s prototype of this ADC contains three complementary SET pairs and four capacitors in the form of capacitor divider. Simulation results based on Monte-Carlo SIMON simulator demonstrates reliable static and dynamic performance at room temperature. SP - 75 EP - 86 AU - Aminzadeh, H. AU - Miralaei, M. AU - Dashti, M. A. AD - KW - Analog-to-digital Converter KW - Coulomb Blockade Regime KW - Coulomb Oscillations KW - Energy-Level Broadening KW - Inverters KW - Logic gates KW - Room Temperature KW - Single-electron Transistor (SET) KW - SIMON KW - SPICE KW - and Transconductance. UR - http://jiaeee.com/article-1-390-en.html ER -