Volume 18, Issue 1 (JIAEEE Vol.18 No.1 2021)
Journal of Iranian Association of Electrical and Electronics Engineers 2021, 18(1): 1-8 |
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Rezaei A, Orouji A A, Sharbati S. Performance Improvement of Field Effect Diodes (FED) for Nanotechnology. Journal of Iranian Association of Electrical and Electronics Engineers 2021; 18 (1) :1-8
URL: http://jiaeee.com/article-1-835-en.html
URL: http://jiaeee.com/article-1-835-en.html
Semnan University
Abstract: (2707 Views)
One of the main problems of field effect diode (FED) is the increasing of its turn-off current as the channel length decreases. Thus, in this paper, a new structure is presented which decreases the injection of extra carriers to the channel and also increases the control of the gate over the channel by reducing the portion of channel shared with the source and drain regions and without the need for reservoirs. Using this technique and without the need for the reservoirs, the source and drain regions increase in size compared to the S-FED structure, and turn-on current is enhanced. Therefore, by comparing the proposed structure with S-FED, it is demonstrated that the important parameters such as Ion, Ion / Ioff ratio, Gate Delay, and EDP have been improved, and this structure can be a proper alternative to conventional structures
Keywords: Field Effect Diode (FED), Side contacted FED (S-FED), Ion/Ioff Ratio, Gate Delay, Energy-delay product (EDP).
Type of Article: Research |
Subject:
Electronic
Received: 2019/03/18 | Accepted: 2019/12/7 | Published: 2021/03/21
Received: 2019/03/18 | Accepted: 2019/12/7 | Published: 2021/03/21
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