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Carbon nanotube field effect transistors (CNTFETs), are considered as a proper candidate to improve the silicon transistor performance at short channel regime. In this paper a novel CNTFET with lightly doped channel and dual section dielectric (LIC-DSD-CNTFET) is proposed. This structure is compared with conventional (C-CNTFET) and dual section dielectric (DSD) structures with similar dimensions. The proposed structure is simulated with (13, 0) CNT and 1 nm diameter, and dual section gates with dielectric constant of 16 and 50.   Channel is divided to four p-type sections with density of 0.2, 0.4, 0.6, and 0.8 nm-1 with length of 5 nm for each section. Simulation results show that the proposed structure improves short channel effects such as drain induced barrier lowering and subthreshold swing. Furthermore, LIC-DSD-CNTFET structure lowers the leakage current and improves current ratio in comparison with DSD and conventional structures. Simulations have been performed based on self-consistent solution of Poisson and Schrodinger equations.

Keywords: Carbon Nanotube Field Effect Transistor, Leakage Current, Short Channel Effects, Dual Section Dielectric, Current ratio

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