Volume 18, Issue 1 (JIAEEE Vol.18 No.1 2021)                   Journal of Iranian Association of Electrical and Electronics Engineers 2021, 18(1): 45-50 | Back to browse issues page

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razagi M, Karam H. Comparison of the current of UV ray radiation on PIN Silicon photodiode and Gallium Arsenide. Journal of Iranian Association of Electrical and Electronics Engineers 2021; 18 (1) :45-50
URL: http://jiaeee.com/article-1-372-en.html
Comparison of the current of UV ray radiation on PIN Silicon photodiode and Gallium Arsenide
Mohamad Razagi * , Hanieh Karam
Department of Electrical Engineering, University of Kurdistan, Sanandaj, Kurdistan, Iran
Abstract:   (2250 Views)
The high-energy UV ray radiation on PIN Silicon photodiodes reduces the optimal parameters of these photodiodes. In this paper, by representing a model, we compare the effect of UV dose on the bright current in these two types of photodiodes and confirm the analytic relationships in order to simulate a model with the help of the Silvaco- Atlas software. In this model, Silicon photodiodes and Gallium Arsenide were investigated under the influence of 300nm UV source radiation in several reverse bias, and we arrived at a logical connection between the analytical and simulation results, and finally, in order to compare these two types of photodiodes, we have shown that the current of darkness in the photodiode has increased significantly with UV dose radiation. Also, the bright current in the Gallium Arsenide photodiodes is not much more than its Silicon model. This phenomenon indicates a higher sensitivity to Gallium Arsenide photodiodes.
Keywords: dark current, UV rays, Gallium arsenide, Photo diode, Silicon
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Type of Article: Research | Subject: Electronic
Received: 2017/08/13 | Accepted: 2019/11/16 | Published: 2021/03/21
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