Volume 21, Issue 1 (JIAEEE Vol.21 No.1 2024)
Journal of Iranian Association of Electrical and Electronics Engineers 2024, 21(1): 17-25 |
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HeidarZadeh M, Daghighi A, Sepehri Z. An Analytical Computation of Threshold Voltage for Ultra-Thin Double Insulating Silicon-on-Diamond MOSFET. Journal of Iranian Association of Electrical and Electronics Engineers 2024; 21 (1) :17-25
URL: http://jiaeee.com/article-1-1433-en.html
URL: http://jiaeee.com/article-1-1433-en.html
Faculty of Engineering, Shahrekord University
Abstract: (1369 Views)
In this paper, for the first time, the distributed potentials in the front and back gate of Ultra-Thin-Body (UTB) Double-Insulating (DI) Silicon-on-Diamond (SOD) MOSFET are computed. The back gate and front gate threshold voltages of the device are computed. Using parabolic potential distribution in the body of the device, the poison’s equation is solved. Promising results are obtained for front and back gate threshold voltages comparing with the 22nm UTB DI SOD and the device simulation results. The gate insulator thickness, the silicon film thickness, the insulator 1 and 2 thicknesses are varied and the front and back gate threshold voltages are computed while comparing the device simulation results. Lower than 20 mV estimation of the threshold voltages using the analytical computations, dictates promising results incorporating the device capacitive model. The Analytical findings are encouraging for threshold voltage estimation of UTB DI SOD MOSFETs.
Keywords: Ultra-thin-body, Double insulating SOD, 2 dimensional poisons’ equation, potential distribution, MOSFET.
Type of Article: Research |
Subject:
Electronic
Received: 2022/01/25 | Accepted: 2023/04/24 | Published: 2023/09/9
Received: 2022/01/25 | Accepted: 2023/04/24 | Published: 2023/09/9
Extended Abstract [PDF 237 KB] (27 Download)
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